VCE:High-vacuum Epitaxial Growth System
The High-vacuum Epitaxial Growth System was developed based on a new concept introduced by US Chevron Research. By using the ultra-high vacuum process, material gas is supplied to wafers in molecular beam epitaxy so that a high level of uniform filming is created with fine thickness control. The applied showerhead system enables response to wafer growth of super-large diameter.
Unit for Si selective growth, SiC growth, GaAs growth, etc.
|Degree of Vacuum||10-8order or below|
|Substrate Heating||Radiant electric resistance heating system (Special PBN heater)・Heat temp. rising rate Max200℃ฺ/min or more|