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VCE

High-vacuum Epitaxial Growth System


VCE:High-vacuum Epitaxial Growth System

Product Features

The High-vacuum Epitaxial Growth System was developed based on a new concept introduced by US Chevron Research. By using the ultra-high vacuum process, material gas is supplied to wafers in molecular beam epitaxy so that a high level of uniform filming is created with fine thickness control. The applied showerhead system enables response to wafer growth of super-large diameter.

Applicatiions

Unit for Si selective growth, SiC growth, GaAs growth, etc.

Specifications

Degree of Vacuum 10-8order or below
Substrate Size ~φ300mm
Substrate Heating Radiant electric resistance heating system (Special PBN heater)・Heat temp. rising rate Max200℃ฺ/min or more

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